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| No. 634717.05.2013 |
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| Toshiba Launches SiC Hybrid Power Module for High Power Switching, Inverter and Motor Control Applications | |||||
| 1700V/1200A IEGT with integrated SiC diode helps designers to improve system efficiency while reducing equipment size by as much as 40% | |||||
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| No. 634115.05.2013 |
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| Toshiba's Announces Miniature 30V MOSFETs with Industry-Leading RDS(ON) | |||||
| New 30V lineup with ON resistance down to just 0.77mO also offers excellent RDS(ON)*Ciss figure of merit | |||||
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| No. 633414.05.2013 |
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| Toshiba's Latest 600V Super Junction MOSFETs Combine Leading RDS(ON)•A Characteristics with Integrated High-Speed Diodes | ||||||
| 4th generation DTMOS IV devices with reduced recovery times improve efficiency and reduce size of switching power supplies | ||||||
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