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| No. 616217.01.2012 |
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| Toshiba takes high-speed inverter switching IGBT to 1350V and 40A | ||||||
| High-temperature device with integrated IGBT and reverse recovery diode saves space and component count in induction heating designs | ||||||
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| No. 615512.12.2011 |
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| Ultra-Miniature, Isolated Couplers Drive IGBTs and MOSFETs at Extended Temperatures | ||||||
| Devices with 5kV isolation and output current up to 2.0A guarantee operation between -40°C to 125°C | ||||||
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| No. 610030.11.2011 |
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| Toshiba Electronics announces next-generation MOSFETs for battery operated equipment | ||||
| Medium power devices offer multiple options for compact, high-current switching of power peripheral circuits | ||||
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