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MOSFET TJ30S06M3L

Product Details
Part Number: TJ30S06M3L    
Category: Transistors/Power MOSFET/Pch single
Associated Documents
Datasheet
Datasheet pdf
General Information
Package Information
Reliability Information
Usage Considerations Specific to each product group
General Usage Conditions
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Property Value Condition
Polarity P-ch  
Power dissipation (single unit) 68 W  
Drain-source voltage -60 V  
Drain current (DC) -30 A  
T_ch 175 degC  
Total gate charge (gate-source plus gate-drain) typ.:80 nC  
Drain-source ON-state resistance max.:0.0218 ohm V_GS=-10V 
Drain-source ON-state resistance max.:0.028 ohm V_GS=-6V 
C_iss typ.:3950 pF  
Package name (TOSHIBA) DPAK+  
Generation U-MOSⅥ  
Lead_finish SnAg  
RoHS_sts Pb-free leads  
Surface mount type Y  
Mold Halogen-free  
Sort_order(generation) U6  
Rel_level Conform  

 

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The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.

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