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No. 597803.02.2010
Toshiba introduces flexible I/O expander family for mobile telecom, industrial and medical applications
IC seamlessly adds connectivity, programmable signal generation, PAL logic functions and keyboard support
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No. 590826.01.2010
Toshiba’s latest LED driver integrates brightness control, PWM grey scaling and protection
High accuracy 16-channel driver delivers constant currents, 256-step brightness control and 65536-step grey scale control
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No. 593718.01.2010
Toshiba announces implementation of new functional safety concept on MCU for SIL3 and ASILD level applications
ARM Cortex™-M3 MCU has been specified, designed and analyzed in accordance with functional safety norms IEC61508 and ISO26262
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No. 592914.01.2010
Toshiba Electronics Europe announces ARM9 micro with on-board graphics processing, USB connectivity and support for home appliance safety standards
Latest ARM926EJ-S™ device features LCD controller, graphics accelerator, USB Host and Device interfaces and Oscillation Frequency Detector (OFD)
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No. 598511.01.2010
Toshiba stellt neue ARM-Cortex-M3-basierte MCUs vor
Demo-Anwendungen für die Bereiche Industrie, Antriebs- und Displaysteuerung
No. 598307.01.2010
Toshiba to enhance line-up of 32nm multi-level cell SSDs
Toshiba Corporation has announced an expanded line-up of NAND-flash-based solid state drives (SSDs) based on the company’s 32nm Multi-Level- Cell NAND flash memories.
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No. 597515.12.2009
Toshiba Launches Highest Density Embedded NAND Flash Memory Modules
e•MMCTM Compliant Embedded Memories Combine up to 64GB NAND and a Controller in a Single Package
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No. 597110.12.2009
Toshiba’s latest low-power gate driver photocouplers deliver output currents to ±6.0A and guaranteed performance to 125°C
IC couplers for IGBTs and MOSFETs feature integrated UVLO and isolation to 3.75kV
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No. 597709.12.2009
Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI
World's first practical technology to extend bulk CMOS to 20nm generation
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No. 597608.12.2009
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
High speed, low power, non-volatile next generation logic devices with memory function

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