DTMOS IV: Gen-4 Super-Junction 600-V MOSFET Series
Using Toshiba's state-of-the-art single epitaxial process, the Gen-4 super-junction 600-V DTMOS IV MOSFET series provides a 30% reduction in Ron·A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron·A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.
DTMOS IV, Super Junction Power MOSFETs
Chips with optimized Rds(on) x Qg
Cgd and Rg allow easy control of switching performance
Low C oss for optimized SPS operation also at light load (see diagram below)
Lower temperature impact on Rds(on) (see diagram below)
Best in class Rds(on) at TO-220SIS (FL): 600V, 0,065Ohm
As a result you will get a high efficiently switching item at an excellent cost performance ratio.