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DTMOS - Super Junction Mosfet

DTMOS IV: Gen-4 Super-Junction 600-V MOSFET Series

Using Toshiba's state-of-the-art single epitaxial process, the Gen-4 super-junction 600-V DTMOS IV MOSFET series provides a 30% reduction in Ron·A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron·A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.

DTMOS IV, Super Junction Power MOSFETs

Chips with optimized Rds(on) x Qg
Cgd and Rg allow easy control of switching performance
Low C oss for optimized SPS operation also at light load (see diagram below)
Lower temperature impact on Rds(on) (see diagram below)
Best in class Rds(on) at TO-220SIS (FL): 600V, 0,065Ohm

As a result you will get a high efficiently switching item at an excellent cost performance ratio.

Product Lineup

R_DS(ON) max (Ω)	DPAK	IPAK	D2PAK	I2PAK	TO-220	TO-220SIS	TO-247	TO-3P(N)	TO-3P(L)
Package details
0.9	TK5P60W	TK5Q60W				TK5A60W
0.75 to 0.82	TK6P60W	TK6Q60W				TK6A60W
0.6	TK7P60W	TK7Q60W				TK7A60W
0.5	TK8P60W	TK8Q60W				TK8A60W
0.38 to 0.43	TK10P60W	TK10Q60W			TK10E60W	TK10A60W
0.3 to 0.34	TK12P60W	TK12Q60W			TK12E60W	TK12A60W		TK12J60W
0.19			TK16G60W	TK16C60W	TK16E60W	TK16A60W	TK16N60W	TK16J60W
0.16			TK20G60W	TK20C60W	TK20E60W	TK20A60W	TK20N60W	TK20J60W
0.088					TK31E60W	TK31A60W	TK31N60W	TK31J60W
0.065						TK39A60W	TK39N60W	TK39J60W
0.038							TK62N60W	TK62J60W
0.018									TK100L60W