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Toshiba Extends Family of 650V SiC Power Devices

Toshiba has extended its family of 650V silicon carbide (SiC) Schottky Barrier Diodes (SBD). 6, 8 and 10A devices are now available in addition to the 12A SBD that entered volume production earlier in 2013. Analysts are predicting significant growth in the SiC power device market and Toshiba is aiming to address this with its new offerings. Read more...

Diode News

New Small Signal Schottky Barrier Diodes

Due to the existing trade-off characteristics Schottky Barrier Diodes can either exhibit low reverse current (IR) or low forward voltage (VF). To reduce this trade-off limitation Toshiba has developed new Schottky Barrier Diodes that exhibit a significant improvement in IR and VF performance.

The new series has approximately one-third of the reverse current compared to previous devices making them the ideal solution for applications that require low loss operation.

These new Schottky Barrier Diodes are available as low IR (DSRxxx-) and low VF (DSFxxx-series) and come in current ratings up to 700mA. Additionally, the availability of components in the ultra compact SC2 package (0.62x0.32mm) make these Schottky Barrier Diodes an ideal solution for applications where board space is a premium.

Low -VF and Low - IR Schottky Barrier Diode Line Up

Datasheets Package Absolute Maximum Ratings Electrical Characteristics (Ta=25C)
VR (V) IO (mA) VF (V) IR (A) CT (pF) @ VR(V)
Max. @ IF(A) Max. @ VR(V)
Low VF DSF01S30SC SC2 30 100 0.3 0.01 7 10 0
DSF521 ESC 30 0.2 0.5 0.2 30 30 0
DSF05S30U USC 30 0.5 0.45 0.5 50 30 0
DSF07S30U USC 30 0.7 0.45 0.7 50 30 0
Low IR DSR01S30SC SC2 30 100 0.5 0.01 0.35 10 0
DSR520 ESC 30 0.2 0.6 0.2 5 30 0
DSR05S30CTB CST2B 30 0.5 0.55 0.5 5 30 0

Package Details


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