New Small Signal Schottky Barrier Diodes

Due to the existing trade-off characteristics Schottky Barrier Diodes can either exhibit low reverse current (I_R) or low forward voltage (V_F).  To reduce this trade-off limitation Toshiba has developed new Schottky Barrier Diodes that exhibit a significant improvement in I_R and V_F performance.

The new series has approximately one-third of the reverse current compared to previous devices making them the ideal solution for applications that require low loss operation.

These new Schottky Barrier Diodes are available as low I_R (DSRxxx-) and low V_F (DSFxxx-series) and come in current ratings up to 700mA.  Additionally, the availability of components in the ultra compact SC2 package (0.62x0.32mm) make these Schottky Barrier Diodes an ideal solution for applications where board space is a premium.

 

Low -V_F and Low - I_R Schottky Barrier Diode Line Up

	Datasheets	Package	Absolute Maximum Ratings		Electrical Characteristics (Ta=25°C)
			VR (V)	IO (mA)	VF (V)		IR (µA)		CT (pF) @ VR(V)
					Max.	@ IF(A)	Max.	@ VR(V)
Low VF	DSF01S30SC	SC2	30	100	0.3	0.01	7	10	0
	DSF521	ESC	30	0.2	0.5	0.2	30	30	0
	DSF521CT	CST2
	DSF05S30U	USC	30	0.5	0.45	0.5	50	30	0
	DSF05S30CTB	CST2B
	DSF07S30U	USC	30	0.7	0.45	0.7	50	30	0
Low IR	DSR01S30SC	SC2	30	100	0.5	0.01	0.35	10	0
	DSR520	ESC	30	0.2	0.6	0.2	5	30	0
	DSR520CT	CST2
	DSR05S30U	USC	30	0.5	0.55	0.5	5	30	0
	DSR05S30CTB	CST2B
	DSR07S30U	USC	30	0.7	0.55	0.7	5	30	0

 

Package Details

SC2	CST2	CST2B
ESC	USC

Further Information

• For Schottky Barrier Diode samples please contact us
• Full diodes product line-up including Rectifier diodes, Zener diodes, Switching diodes, Varicap diodes and PIN-diodes.