Power MOSFETs for automotive motion control
Toshiba's Power MOSFETs for automotive applications combine the WARP technology with very low ON-resistance. The latest product DPAK+ replaces conventional internal aluminium bondwires between the MOSFET die and the package leads with wider copper clamps. The clamping mechanism maintains a highly reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration. In addition, the larger cross-sectional area, combined with higher electrical connectivity, minimises heating due to package losses and reduces package inductance. This, in turn, contributes to heat reduction, lower noise and faster device operation.
Our new range of power MOSFETs are optimized for motors used in fans, pumps and other automotive motion control applications.
U-MOS is our latest trench semiconductor technology. MOSFETs in the new DPAK+ automotive family have low leakage currents and low on
resistances as low as 2.4m? (typical, VGS = 10V).
Features
- Achieves low ON-resistance, low package inductance and high current carrying capability (80A) due to the use of copper (Cu) connectors
- AEC-Q101-qualified at a channel temperature (Tch) of 175°C
- The DPAK+ package is pin-to-pin compatible with conventional DPAK package
Package
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Copper Connector Construction
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Product Selection Matrix
Further Information
Documents
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