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Automotive MOSFETs

Automotive MOSFETsPower MOSFETs for automotive motion control

Toshiba's Power MOSFETs for automotive applications combine high current capability with very low ON-resistance and thermal resistance.  The advanced TO-220SM(W) package uses copper (Cu) connectors combined with a wide source terminal to deliver low ON-resistance, high efficiency, very good power cycling capability and currents to 150A. 

Our new range of power MOSFETs are optimized for motors used in fans, pumps and other automotive motion control applications.  The new MOSFETs combine industry-leading ON-resistance and input capacitance ratings with a package design that offers better thermal dissipation and power cycling capabilities than previous automotive MOSFETs.

U-MOS is our latest trench semiconductor technology.  This technology contributes to typical RDS(ON) specifications as low as 1.7mΩ and typical input capacitances (Ciss) down to just 4500pF.  As a result, the devices offer the industry’s smallest RDS(ON) gate charge (Qg) ‘figure of merit’, which ensures optimum switching speed and efficiency.


Features

  • Achieves low ON-resistance, low package inductance and low thermal resistance due to the use of copper (Cu) connectors.
  • Achieves a high current-carrying capability due to the use of a wide source terminal (ID (DC) = 150 A max)
  • AEC-Q101-qualified at a channel temperature (Tch) of 175˚C
  • Thin package: 3.7-mm (max) thick, much thinner than the previous TO-220SM package with a thickness of 4.7 mm (max)

Package

Copper Connector Construction

Product Selection Matrix

Part Number Absolute Maximum Ratings RDS(ON) Max (m?) Ciss Typ. (pF) Qg Typ. (nC) Series
VDSS (V) VGSS (V) ID (A) Typ. Max
TJ120F06J3 –60 ±20 –120 5.5 8 11500 258 U-MOSIII
TK100F04K3 40 ±20 100 2.5 3 4500 102 U-MOSIII
TK150F04K3 40 ±20 150 1.7 2.1 7500 166 U-MOSIV
TK100F06K3 60 ±20 100 4 5 4500 98 U-MOSIV
TK130F06K3 60 ±20 130 2.6 3.4 8400 170 U-MOSIV
TK50F15J1 150 ±20 50 22 30 4300 75 U-MOSIV

 

Further Information

   
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