The CMOS (complementary metal oxide semiconductor) technology is the base for Toshiba’s custom LSI (large scale integration) products. Toshiba is continuously investing in fabrication capacity and advanced process development.

Toshiba CMOS Technology Roadmap for ASIC

• 40nm, 65nm, 90nm and 130nm are the mainstream technologies today
• The more mature technologies – from 0.18um to 0.8um are still in production
• RFCMOS PDK is available for 130nm, 90nm, 65nm and 40nm

Toshiba has already started process development for the technologies of geometries smaller than 40nm.  However, production of mature technologies, is still available for design starts.  Toshiba has no plans to discontinue production, (for example, 1.0um technology, introduced in 1986 is still in production.)

Note: The CMOS Technology roadmap is an interactive element. Please select the technology by moving your cursor over the image and you will get key feature / target applications listed in a text-box.

As a result of this long term strategy, a variety of technologies ranging from mature 0.6um down to advanced 65nm transistor channel length technologies are available for design start today (2006).  Customers can select the one that best fits their specific product requirements in terms of cost and performance, voltage/power constraints and cell/block availability.  Mature technologies offer high voltage options (18V/48V), later technologies offer several process options for low power, high speed, low leakage current and precise analogue functions.  All technologies support a wide range of different I/O (input/output) voltages.

More information about different technologies are available in our product flyer:

• 0.6µm CMOS ASIC Technology (TC190)
• 0.4µm (3V) CMOS ASIC Technology (TC200)
• 0.4µm (3V/5V) CMOS ASIC Technology (TC203)
• 0.3µm CMOS ASIC Technology (TC220-TC223)
• 0.25µm CMOS ASIC Technology (TC240)
• 0.18µm CMOS ASIC Technology (TC260)
• 0.13µm CMOS ASIC Technology (TC280)
• 90nm CMOS ASIC Technology (TC300)
• 65nm CMOS ASIC Technology (TC320)
• CMOS ASIC (2007)
• ASIC & Foundry RFCMOS Flyer (pdf 642KB)

If you require further information please contact the ASIC & Foundry team.

RFCMOS Technology

Toshiba’s RF-CMOS technology combines mature baseline CMOS processes with a fully-featured RF PDK.  The PDK's are available for 130nm, 90nm, 65nm and 40nm.  Further details can be find here.

Universal Array (™)

Universal Array ^™ is a new system-on-chip (SoC) design platform that significantly reduces the development time for SoC devices.  By applying Universal Array ^™ , Toshiba has cut the turn-around-time for production of engineering samples for 130nm and 90nm process technology significantly.  Further details can be found here.

Toshiba CMOS Technology for Foundry

All Toshiba CMOS technologies are available for foundry business.  Mature technology production is at Iwate plant (0.6um ... 0.35um on 6 inch wafer).  While mainstream and advanced technology production is at Oita plant (0.25um ... 0.13um on 8 inch wafer and from 90nm onwards on 12 inch wafer).
Further details can be found here.

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