Si Transistor

Features

• Optimized for application in VCOs
• Low noise
• Thin package

fT=4-11GHz

Part No.	Package	Max Rating		Electrical Characteristics
		VCEO (V)	Ic (mA)	Cob (pF)	Cre (pF)	fT (GHz)		|S21|^2 (dB)		NF (dB)
MT3S11T	TESM	6	40	-	0.65	6	@1V/5mA	6.5	@3V,20mA,2GHz	2.4	@1V,5mA,2GHz
MT3S12T	TESM	6	40	-	0.7	7	@1V/5mA	7.0	@3V,20mA,2GHz	1.1	@1V,5mA,2GHz
MT3S14T	TESM	4	30	-	0.35	11	@1V/5mA	10.0	@3V,15mA,2GHz	1.7	@1V,5mA,2GHz
MT3S16T	TESM	5	60	-	2.7	4	@3V,10mA	4.5	@2V,10mA,1GHz	2.4	@2V,5mA,1GHz
								5.5	@3V,10mA,1GHz
MT3S17T	TESM	8	12	-	0.3	7	@1V,5mA	14.0	@3V,7mA,1GHz	1.4	@1V,5mA,1GHz
MT3S18T	TESM	8	20	-	0.4	6	@1V,5mA	14.0	@3V,15mA,1GHz	1.4	@1V,5mA,1GHz

fT=15-20GHz

Part No.	Package	Max Rating		Electrical Characteristics
		VCEO (V)	Ic (mA)	Cob (pF)	Cre (pF)	fT (GHz)		|S21|^2 (dB)		NF (dB)
MT3S35T	TESM	4.5	24	0.46	0.21	20	@3V,10mA,2GHz	18.0	@3V,10mA,1GHz	1.1	@3V,2mA,1GHz
								13.0	@3V,10mA,2GHz	1.4	@3V,2mA,2GHz
MT3S36T	TESM	4.5	36	0.55	0.26	19	@3V,15mA,2GHz	17.5	@3V,15mA,1GHz	1.1	@3V,3mA,1GHz
								12.5	@3V,15mA,2GHz	1.3	@3V,3mA,2GHz
MT3S75T	TESM	4.5	50	0.66	0.35	19	@3V,20mA,2GHz	17.0	@3V,20mA,1GHz	0.9	@3V,3mA,1GHz
								12.0	@3V,20mA,2GHz	1.2	@3V,3mA,2GHz
MT3S38T	TESM	4.5	50	0.76	0.44	17	@3V,20mA,2GHz	16.5	@3V,20mA,1GHz	0.9	@3V,5mA,1GHz
								11.0	@3V,20mA,2GHz	1.2	@3V,5mA,2GHz
MT3S40T	TESM	4.5	70	0.77	0.44	17	@3V,20mA,2GHz	16.5	@3V,20mA,1GHz	0.9	@3V,5mA,1GHz
								11.0	@3V,20mA,2GHz	1.2	@3V,5mA,2GHz
MT3S41T	TESM	4.5	80	0.9	0.55	15	@3V,20mA,2GHz	15.5	@3V,20mA,1GHz	0.8	@3V,5mA,1GHz
								10.0	@3V,20mA,2GHz	1.2	@3V,5mA,2GHz
MT3S45T	TESM	4.5	30	0.66	0.33	18	@3V,20mA,2GHz	17.5	@3V,20mA,1GHz	0.9	@3V,6mA,1GHz
								12.0	@3V,20mA,2GHz	1.2	@3V,6mA,2GHz
MT3S46T	TESM	4.5	40	0.69	0.34	16	@3V,20mA,2GHz	17.0	@3V,20mA,1GHz	0.9	@3V,7mA,1GHz
								11.5	@3V,20mA,2GHz	1.2	@3V,7mA,2GHz