Toshiba Electronic ComponentsJump to the main text
 

Power MOSFET VS-6 Package Series

Features:

  • Low ON Resistance Achieved by Using U-MOSIII Structure
  • Built-in Protection Zener Diode between Gate and Source
  • Maximum Power Dissipation =2.2W (t < 5s)
  • 1.8-V Low Drive Available

Line-Up:


Part Number Maximum Ratings Circuit Configuration RDS(ON) max.(mΩ)
VDSS(V) ID(A) 10V 4.5V 2.5V 2.0V 1.8V
TPC6001 20 6 N-ch
Single
- 30 45 60 -
TPC6004 20 6 - 24 32 37 -
TPC6002 30 6 30 50 - - -
TPC6003 30 6 24 32 - - -
TPC6005 30 6 - 28 35 41 -
TPC6201 30 2.5 N-ch Dual 95 145 - - -
TPC6103 -12 -5.5 P-ch
Single
- 35 55 - 90
TPC6105 -20 -2.7 - 110 160 - 300
TPC6101 -20 -4.5 - 60 100 180 -
TPC6104 -20 -5.5 - 40 60 - 120
TPC6102 -30 -4.5 60 100 - - -

   
Site Map | Terms and Conditions  Copyright 2000-2007 TOSHIBA Electronics Europe GmbH, All Rights Reserved.