Toshiba offers several types of “Non-Volatile-Memory” (NVM), optimized for different applications:

• eFUSE (Electrical Programmable Fuse)
  • One-time-programmable (OTP) element from 16 bit to 8192 bit
  • Programming by poly- or gate oxide anti-fuse, integrated program voltage generation
  • Standard CMOS process - No need for any additional process steps
  • Application ranging for trimming/configuration data, ChipID to key storage and others
  • eFUSE flyer (pdf 130KB)
• EEPROM (Electrical Erasable PROM)
  • Programmable >100k cycles, blocks of 64 to 640kbit
  • Special process options required
  • Applications: Smart Cards, Application data storage
• eFLASH (Embedded Flash Memory)
  • “NOR/NAND-Flash type” Programmable ~100 cycles, blocks from 1Mbit to 8Mbit
  • Special Process options required
  • Applications: Optimized as Program Memory for Microcontroller (OTP/ROM replace)
  • Fast random read access
  • Not optimized for mass data storage
  • NANO-FLASH^TM see TX19-Family web-page

NVM (Non-Volatile-Memory) Lineup

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