Embedded DRAM

Toshiba is the leader in embedded DRAM technology and is currently shipping its fifth generation of product in high-volume production.

Toshiba EDRAM Features And Benefits:

• High performance with fast data transfer rates due to wide on-chip memory buses
• Much denser than SRAM
• Low power
• Low Soft Error Rates (SER)
• Multiple cores per chip
• System architecture optimization and reduction of discrete components
• Easy and effective testing with a direct-access test and DRAM BIST
• High yield through redundancy in DRAM macros
• Various types of DRAM macros with configurable depth and width
• Trench process - one transistor DRAM cell structure utilizes trench process.  The trench capacitor allows for a planar surface topology that enhances reliability without compromising logic performance
• High bandwidth - freed from I/O restrictions, embedded DRAM cores provide high-memory bandwidth with asynchronous interface and a bus width
• selectable from 64-, 128- and 256 bits.
• Configurable Macros - DRAM macros are configurable in depth and width to suit particular application requirements

Further details could be found in the CMOS ASIC Flyer (pdf 1100KB).

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